Invention Grant
- Patent Title: Three-dimensional thin-film semiconductor substrate with through-holes and methods of manufacturing
- Patent Title (中): 具有通孔的三维薄膜半导体衬底及制造方法
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Application No.: US13962291Application Date: 2013-08-08
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Publication No.: US08916772B2Publication Date: 2014-12-23
- Inventor: Mehrdad M. Moslehi , David Xuan-Qi Wang
- Applicant: Solexel, Inc.
- Applicant Address: US CA Milpitas
- Assignee: Solexel, Inc.
- Current Assignee: Solexel, Inc.
- Current Assignee Address: US CA Milpitas
- Main IPC: H01L31/0352
- IPC: H01L31/0352 ; H01L31/18 ; H01L27/142 ; H01L31/052
Abstract:
A three-dimensional thin-film semiconductor substrate with selective through-holes is provided. The substrate having an inverted pyramidal structure comprising selectively formed through-holes positioned between the front and back lateral surface planes of the semiconductor substrate to form a partially transparent three-dimensional thin-film semiconductor substrate.
Public/Granted literature
- US20130319520A1 THREE-DIMENSIONAL THIN-FILM SEMICONDUCTOR SUBSTRATE WITH THROUGH-HOLES AND METHODS OF MANUFACTURING Public/Granted day:2013-12-05
Information query
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