The present invention introduces the novel, improved design approach of the semiconductor devices that utilize the effect of carrier recombination, for example, to produce the electromagnetic radiation. The approach is based on the separate control over the injection of the electrons and holes into the active region of the device. As a result, better recombination efficiencies can be achieved, and the effect of the wavelength shift of the produced radiation can be eliminated. The devices according to the present invention outperform existing solid state light and electromagnetic radiation sources and can be used in any applications where solid state light sources are currently involved, as well as any applications future discovered.