Invention Grant
- Patent Title: Optical semiconductor device
- Patent Title (中): 光半导体器件
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Application No.: US14196474Application Date: 2014-03-04
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Publication No.: US08916946B2Publication Date: 2014-12-23
- Inventor: Yoshiyuki Doi , Yoshifumi Muramoto , Takaharu Ohyama
- Applicant: Nippon Telegraph and Telephone Corporation , NTT Electronics Corporation
- Applicant Address: JP Tokyo JP Kanagawa
- Assignee: Nippon Telegraph and Telephone Corporation,NTT Electronics Corporation
- Current Assignee: Nippon Telegraph and Telephone Corporation,NTT Electronics Corporation
- Current Assignee Address: JP Tokyo JP Kanagawa
- Agency: Workman Nydegger
- Priority: JP2011-015580 20110127
- Main IPC: H01L31/0232
- IPC: H01L31/0232 ; H01L27/144 ; H01L31/0203 ; H01L31/0224 ; H01L31/105

Abstract:
The present invention is intended to provide a compact and simple optical semiconductor device that reduces crosstalk (leakage current) between light receiving elements. According to the present invention, since a back surface electrode is a mirror-like thin film, crosstalk to an adjacent light receiving element can be suppressed, thereby reducing a detection error of a light intensity. By disposing a patterned back surface electrode or by disposing an ohmic electrode at the bottom of an insulating film over the whole back surface, contact resistance on the back surface can be reduced. By using the optical semiconductor elements with a two-dimensional arrangement and by using a mirror-like thin film as the back surface electrode, crosstalk can be reduced. By accommodating the optical semiconductor elements in the housing in a highly hermetic condition, the optical semiconductor elements can be protected from an external environment.
Public/Granted literature
- US20140183677A1 OPTICAL SEMICONDUCTOR DEVICE Public/Granted day:2014-07-03
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