Invention Grant
- Patent Title: Shallow trench isolation structure having a nitride plug
- Patent Title (中): 具有氮化物塞的浅沟槽隔离结构
-
Application No.: US13275729Application Date: 2011-10-18
-
Publication No.: US08916950B2Publication Date: 2014-12-23
- Inventor: Byeong Y. Kim , Shreesh Narasimha
- Applicant: Byeong Y. Kim , Shreesh Narasimha
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Jinesh Patel; Yuanmin Cai
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L27/04 ; H01L21/84 ; H01L21/762
Abstract:
A semiconductor structure and method for forming a shallow trench isolation (STI) structure having one or more oxide layers and a nitride plug. Specifically, the structure and method involves forming one or more trenches in a substrate. The STI structure is formed having one or more oxide layers and a nitride plug, wherein the STI structure is formed on and adjacent to at least one of the one or more trenches. One or more gates are formed on the substrate and spaced at a distance from each other. A dielectric layer is formed on and adjacent to the substrate, the STI structure, and the one or more gates.
Public/Granted literature
- US20130093040A1 SHALLOW TRENCH ISOLATION STRUCTURE HAVING A NITRIDE PLUG Public/Granted day:2013-04-18
Information query
IPC分类:
