Invention Grant
- Patent Title: Semiconductor device and method of producing same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13511543Application Date: 2009-11-27
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Publication No.: US08916964B2Publication Date: 2014-12-23
- Inventor: Yasuji Taketsuna , Eisaku Kakiuchi , Katsuhiko Tatebe , Masahiro Morino , Tomohiro Takenaga
- Applicant: Yasuji Taketsuna , Eisaku Kakiuchi , Katsuhiko Tatebe , Masahiro Morino , Tomohiro Takenaga
- Applicant Address: JP Toyota-Shi
- Assignee: Toyota Jidosha Kabushiki Kaisha
- Current Assignee: Toyota Jidosha Kabushiki Kaisha
- Current Assignee Address: JP Toyota-Shi
- Agency: Kenyon & Kenyon LLP
- International Application: PCT/JP2009/070008 WO 20091127
- International Announcement: WO2011/064873 WO 20110603
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L23/00 ; H01L21/48 ; H01L23/473

Abstract:
A semiconductor device and a method of producing the same, wherein a joining member and a joined member are bonded by means of brazing in a way such that no voids are left inside the joining layer. The semiconductor device comprises a joined member and a joining member which is joined to the joined member by means of brazing. The joined member is provided with a through hole which is open on the joining surface with the joining member, and a path communicating with the through hole is provided on at least one of the joining surface of the joining member with the joined member or the joining surface of the member with the joining member.
Public/Granted literature
- US20120280383A1 SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING SAME Public/Granted day:2012-11-08
Information query
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