A control circuit for a nonvolatile semiconductor storage device, during a write operation, configures multiple bit lines so that bit lines that are adjacent to select bit lines are nonselect bit lines. The control circuit applies a first voltage to a write bit line that is included in the select bit lines, and also applies a second voltage that is higher than the first voltage, to a write inhibit bit line that is included in the select bit lines. Then, the control circuit applies a third voltage that is higher than the second voltage to the nonselect bit lines. As a result, the control circuit raises the voltage of the write inhibit bit line, while maintaining the write bit line at the first voltage. Next, the control circuit applies a fourth voltage for the write operation to the drain-side select gate line.