Invention Grant
- Patent Title: Non-volatile semiconductor storage apparatus
- Patent Title (中): 非易失性半导体存储装置
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Application No.: US13753128Application Date: 2013-01-29
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Publication No.: US08918699B2Publication Date: 2014-12-23
- Inventor: Fubito Igari , Hiroyuki Suto , Yasuyuki Ozawa
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G06F11/10

Abstract:
According to one embodiment, a non-volatile semiconductor storage apparatus is configured to decide determination periods respectively corresponding to each of management blocks based on rewrite count information items and a temperature, and to perform a determination processing for each of management blocks for each determination period. The determination processing includes determining whether first data read from a block in the blocks is normal based on the number of errors that are occurred in the first data. The apparatus is configured to perform a rewrite processing of rewriting the first data to second data which is error-corrected when it is determined that the first data is not normal.
Public/Granted literature
- US20140040701A1 NON-VOLATILE SEMICONDUCTOR STORAGE APPARATUS Public/Granted day:2014-02-06
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