Invention Grant
- Patent Title: Magnetic random access memory
- Patent Title (中): 磁性随机存取存储器
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Application No.: US14011094Application Date: 2013-08-27
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Publication No.: US08923042B2Publication Date: 2014-12-30
- Inventor: Nobuyuki Ishiwata , Hideaki Numata , Norikazu Ohshima
- Applicant: NEC Corporation
- Applicant Address: JP Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP Tokyo
- Agency: Young & Thompson
- Priority: JP2006-108480 20060411
- Main IPC: G11C11/15
- IPC: G11C11/15 ; H01L43/02 ; G11C11/16 ; H01L23/367 ; H01L43/08 ; H01L27/22

Abstract:
A magnetic random access memory according to the present invention is provided with: a magnetic recording layer including a magnetization free region having a reversible magnetization, wherein a write current is flown through the magnetic recording layer in an in-plane direction; a magnetization fixed layer having a fixed magnetization; a non-magnetic layer provided between the magnetization free region and the magnetization fixed layer; and a heat sink structure provided to be opposed to the magnetic recording layer and having a function of receiving and radiating heat generated in the magnetic recording layer. The magnetic random access memory thus-structured radiates heat generated in the magnetic recording layer by using the heat sink structure, suppressing the temperature increase caused by the write current flown in the in-plane direction.
Public/Granted literature
- US20130341744A1 MAGNETIC RANDOM ACCESS MEMORY Public/Granted day:2013-12-26
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