Invention Grant
- Patent Title: Memory control device
- Patent Title (中): 内存控制装置
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Application No.: US13657281Application Date: 2012-10-22
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Publication No.: US08923075B2Publication Date: 2014-12-30
- Inventor: Junya Okubo
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Foley & Lardner LLP
- Priority: JP2011-240557 20111101
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C7/10

Abstract:
A memory control device that can reduce a power consumption at the time of writing a memory. The memory control device includes a data output buffer circuit that burst-transfers data to a memory device through a data bus, and a mask signal output buffer circuit that outputs, to the memory device, a mask signal indicative of data that prohibits write into a memory cell within the memory device among the data. The data output buffer circuit puts an output node into a high impedance state when the mask signal is indicative of write prohibition.
Public/Granted literature
- US20130141990A1 MEMORY CONTROL DEVICE Public/Granted day:2013-06-06
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