Invention Grant
- Patent Title: Manufacturing method of top plate of plasma processing apparatus
- Patent Title (中): 等离子体处理装置顶板的制造方法
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Application No.: US13938507Application Date: 2013-07-10
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Publication No.: US08925351B2Publication Date: 2015-01-06
- Inventor: Caizhong Tian , Toshihisa Nozawa , Kiyotaka Ishibashi
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: JP2006-012965 20060120; TW96102364A 20070122
- Main IPC: C03C27/10
- IPC: C03C27/10 ; C03C27/00 ; B32B37/12 ; H01J37/32

Abstract:
A manufacturing method of a top plate hermetically attached to an upper opening of a tubular shaped container body for forming a processing container of a plasma processing apparatus is provided. The manufacturing method includes the steps of; preparing a top plate body comprised of a dielectric body for transmitting an electromagnetic wave, and having a gas ejection hole for ejecting a gas into the processing container; forming a discharge prevention member having a discharge prevention member body comprised of a dielectric body having a permeability, and a dense member comprised of a dielectric body without a permeability covering at least a side face of the discharge prevention member body; and attaching the discharge prevention member in the gas ejection hole of the top plate body.
Public/Granted literature
- US20130292047A1 MANUFACTURING METHOD OF TOP PLATE OF PLASMA PROCESSING APPARATUS Public/Granted day:2013-11-07
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