Invention Grant
- Patent Title: MEMS sensor with stress isolation and method of fabrication
- Patent Title (中): 具有应力隔离的MEMS传感器和制造方法
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Application No.: US13482332Application Date: 2012-05-29
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Publication No.: US08925384B2Publication Date: 2015-01-06
- Inventor: Andrew C. McNeil , Gary G. Li , Lisa Z. Zhang , Yizhen Lin
- Applicant: Andrew C. McNeil , Gary G. Li , Lisa Z. Zhang , Yizhen Lin
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: G01P15/125
- IPC: G01P15/125
Abstract:
A MEMS sensor (20, 86) includes a support structure (26) suspended above a surface (28) of a substrate (24) and connected to the substrate (24) via spring elements (30, 32, 34). A proof mass (36) is suspended above the substrate (24) and is connected to the support structure (26) via torsional elements (38). Electrodes (42, 44), spaced apart from the proof mass (36), are connected to the support structure (26) and are suspended above the substrate (24). Suspension of the electrodes (42, 44) and proof mass (36) above the surface (28) of the substrate (24) via the support structure (26) substantially physically isolates the elements from deformation of the underlying substrate (24). Additionally, connection via the spring elements (30, 32, 34) result in the MEMS sensor (22, 86) being less susceptible to movement of the support structure (26) due to this deformation.
Public/Granted literature
- US20130319117A1 MEMS SENSOR WITH STRESS ISOLATION AND METHOD OF FABRICATION Public/Granted day:2013-12-05
Information query
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