Invention Grant
- Patent Title: Light-emitting device and manufacturing method thereof
- Patent Title (中): 发光元件及其制造方法
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Application No.: US13888630Application Date: 2013-05-07
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Publication No.: US08926389B2Publication Date: 2015-01-06
- Inventor: Yusuke Nishido
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2012-109603 20120511
- Main IPC: H01L51/56
- IPC: H01L51/56 ; H05B33/04 ; H01L51/52 ; H01L51/00

Abstract:
A light-emitting device which is thin and lightweight and has high flexibility, impact resistance, and reliability is provided. Further, a light-emitting device which is thin and lightweight and has high flexibility, impact resistance, and hermeticity is provided. In the light-emitting device in which a light-emitting region including a transistor and a light-emitting element is sealed between a first flexible substrate and a second flexible substrate, an opening is provided in the second flexible substrate around a region overlapping with the light-emitting region, the opening is filled with frit glass containing low-melting glass and bonding the first flexible substrate and the second flexible substrate, and the frit glass is provided so as to be in contact with an insulating layer provided over the first flexible substrate. The second flexible substrate may include an opening in a region overlapping with the light-emitting region.
Public/Granted literature
- US20130300284A1 LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2013-11-14
Information query
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