Invention Grant
US08926864B2 Method of producing β-SiAION, β-SiAION, and products using the same
有权
生产方法-SiAION,&bgr; -SiAION以及使用该产品的产品
- Patent Title: Method of producing β-SiAION, β-SiAION, and products using the same
- Patent Title (中): 生产方法-SiAION,&bgr; -SiAION以及使用该产品的产品
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Application No.: US13697556Application Date: 2011-04-21
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Publication No.: US08926864B2Publication Date: 2015-01-06
- Inventor: Masayoshi Ichikawa , Hideyuki Emoto
- Applicant: Masayoshi Ichikawa , Hideyuki Emoto
- Applicant Address: JP Tokyo
- Assignee: Denki Kagaku Kogyo Kabushiki Kaisha
- Current Assignee: Denki Kagaku Kogyo Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Stein IP, LLC
- Priority: JP2010-110865 20100513
- International Application: PCT/JP2011/059858 WO 20110421
- International Announcement: WO2011/142228 WO 20111117
- Main IPC: C09K11/08
- IPC: C09K11/08 ; C09K11/59 ; C09K11/64 ; C09K11/77 ; C04B35/597 ; C04B35/626 ; C04B35/64 ; H05B33/14 ; H01L33/50 ; C01B21/082

Abstract:
A method of producing β-SiAlON includes a sintering process, in which β-SiAlON starting materials, a mixture of silicon nitride, aluminum nitride, optically active element compound, and at least one compound selected from aluminum oxide and silicon oxide, are sintered at temperatures ranging from 1820° C. to 2200° C. The method provides new β-SiAlON low in carbon content and having high luminescence intensity by placing a plurality of boron nitride vessels in a graphite box to allow the β-SiAlON starting materials packed in the plurality of boron nitride vessels to easily come in contact with nitrogen gas, and performing sintering in nitrogen atmosphere.
Public/Granted literature
- US20130106277A1 METHOD OF PRODUCING B-SIALON, B-SIALON, AND PRODUCTS USING THE SAME Public/Granted day:2013-05-02
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