Invention Grant
US08927179B2 Optical member for EUV lithography, and process for production of reflective layer-equipped substrate
有权
用于EUV光刻的光学构件,以及用于生产装有反射层的衬底的工艺
- Patent Title: Optical member for EUV lithography, and process for production of reflective layer-equipped substrate
- Patent Title (中): 用于EUV光刻的光学构件,以及用于生产装有反射层的衬底的工艺
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Application No.: US13469161Application Date: 2012-05-11
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Publication No.: US08927179B2Publication Date: 2015-01-06
- Inventor: Masaki Mikami
- Applicant: Masaki Mikami
- Applicant Address: JP Tokyo
- Assignee: Asahi Glass Company, Limited
- Current Assignee: Asahi Glass Company, Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt L.L.P.
- Priority: JP2009-276178 20091204
- Main IPC: G03F1/24
- IPC: G03F1/24 ; G02B5/08 ; C23C16/40 ; G03F7/20 ; B82Y40/00 ; B82Y10/00

Abstract:
There are provided an EUV optical member, in which deterioration in the reflectivity due to oxidation of the Ru protective layer is prevented, a functional film-equipped substrate to be employed for production of the EUV optical member, and a process for producing the functional film-equipped substrate. A reflective layer-equipped substrate for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light and a protective layer for protecting the reflective layer, formed in this order on the substrate, wherein the reflective layer is a Mo/Si multilayer reflective film, the protective layer is a Ru layer or a Ru compound layer, and an intermediate layer containing from 0.5 to 20 at % of oxygen and from 80 to 99.5 at % of Si is formed between the reflective layer and the protective layer.
Public/Granted literature
- US20120219890A1 OPTICAL MEMBER FOR EUV LITHOGRAPHY, AND PROCESS FOR PRODUCTION OF REFLECTIVE LAYER-EQUIPPED SUBSTRATE Public/Granted day:2012-08-30
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