Invention Grant
- Patent Title: Method to print contact holes at high resolution
- Patent Title (中): 以高分辨率打印接触孔的方法
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Application No.: US13741579Application Date: 2013-01-15
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Publication No.: US08927198B2Publication Date: 2015-01-06
- Inventor: Martin Burkhardt , Yongan Xu
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Parashos T. Kalaitzis, Esq.
- Main IPC: G03F1/44
- IPC: G03F1/44 ; G03F1/00

Abstract:
A two-dimensional dense array of contact holes can be printed on a negative photoresist employing a combination of a quadrupole illumination lens and a lithographic mask including a criss-cross pattern of opaque lines. The openings in the quadrupole illumination lens are aligned along the perpendicular directions of the opaque lines. Discrete contact holes can be printed on a negative photoresist employing a combination of a quadrupole illumination lens and a lithographic mask including a criss-cross pattern of opaque subresolution assist features and discrete opaque cross patterns. Alternately, a two-dimensional array of contact holes can be printed on a negative photoresist employing a quadrupole illumination lens and a checkerboard pattern of openings. The openings in the quadrupole illumination lens are in diagonal directions.
Public/Granted literature
- US20140199615A1 METHOD TO PRINT CONTACT HOLES AT HIGH RESOLUTION Public/Granted day:2014-07-17
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