Invention Grant
- Patent Title: Double patterning method
- Patent Title (中): 双重图案化方法
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Application No.: US14059596Application Date: 2013-10-22
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Publication No.: US08927200B2Publication Date: 2015-01-06
- Inventor: Kanako Meya , Takeo Shioya , Motoyuki Shima
- Applicant: JSR Corporation
- Applicant Address: JP Tokyo
- Assignee: JSR Corporation
- Current Assignee: JSR Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-111925 20110518
- Main IPC: G03F7/26
- IPC: G03F7/26 ; G03F7/20 ; H01L21/027
Abstract:
A double patterning method includes providing a first resist film on a substrate using a first photoresist composition. The first resist film is exposed. The exposed first resist film is developed using a first developer to form a first resist pattern. A second resist film is provided in at least space areas of the first resist pattern using a second photoresist composition. The second resist film is exposed. The exposed second resist film is developed using a second developer that includes an organic solvent to form a second resist pattern. The first resist pattern is insoluble or scarcely soluble in the second developer.
Public/Granted literature
- US20140080066A1 DOUBLE PATTERNING METHOD Public/Granted day:2014-03-20
Information query
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