Invention Grant
- Patent Title: Method for producing solid-state imaging device
- Patent Title (中): 固态成像装置的制造方法
-
Application No.: US14221172Application Date: 2014-03-20
-
Publication No.: US08927321B2Publication Date: 2015-01-06
- Inventor: Toshihiro Nakatani
- Applicant: FUJIFILM Corporation
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2011-204946 20110920
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L51/00 ; H01L27/146 ; H01L27/30

Abstract:
The solid-state imaging device in which pixel electrodes, a photoelectric conversion portion having an organic film generating electric charge in response to incident light, a transparent counter electrode, and a sealing layer are formed on a substrate is produced by the method including causing a metal mask to come into close contact with a substrate surface, on which the pixel electrodes are disposed, by magnetic force; forming the organic film by vapor-depositing an organic substance to the substrate surface on which the pixel electrodes are disposed; removing the metal mask after the organic film is formed; forming the counter electrode on the organic film; and forming the sealing layer covering the counter electrode, wherein the metal mask has undergone half etching to have a half etching portion and comes into close contact with the substrate surface such that a lower surface of the half etching portion faces the pixel electrodes.
Public/Granted literature
- US20140206128A1 METHOD FOR PRODUCING SOLID-STATE IMAGING DEVICE Public/Granted day:2014-07-24
Information query
IPC分类: