Invention Grant
- Patent Title: Method of manufacturing nonvolatile memory device
- Patent Title (中): 制造非易失性存储器件的方法
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Application No.: US13997818Application Date: 2012-03-09
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Publication No.: US08927331B2Publication Date: 2015-01-06
- Inventor: Ichirou Takahashi , Takumi Mikawa
- Applicant: Ichirou Takahashi , Takumi Mikawa
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JP2011-053209 20110310
- International Application: PCT/JP2012/001620 WO 20120309
- International Announcement: WO2012/120893 WO 20120913
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L45/00
Abstract:
A method of manufacturing a nonvolatile memory device includes: forming a tantalum oxide material layer including an oxygen-deficient transition metal oxide; forming a tantalum oxide material layer including a transition metal oxide and having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the tantalum oxide material layer; and exposing, after the forming of a tantalum oxide material layer, the tantalum oxide material layer to plasma generated from a noble gas.
Public/Granted literature
- US20130295745A1 METHOD OF MANUFACTURING NONVOLATILE MEMORY DEVICE Public/Granted day:2013-11-07
Information query
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