Invention Grant
- Patent Title: Semiconductor device and production method therefor
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14166540Application Date: 2014-01-28
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Publication No.: US08927341B2Publication Date: 2015-01-06
- Inventor: Masafumi Kuramoto , Satoru Ogawa , Miki Niwa
- Applicant: Nichia Corporation
- Applicant Address: JP Anan-Shi
- Assignee: Nichia Corporation
- Current Assignee: Nichia Corporation
- Current Assignee Address: JP Anan-Shi
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2009-013712 20090123
- Main IPC: H01L21/60
- IPC: H01L21/60 ; H01L23/00 ; H01L21/18 ; H01L33/64 ; H01L33/62
Abstract:
An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. A method for producing a semiconductor device in which silver or silver oxide provided on a surface of a base and silver or silver oxide provided on a surface of a semiconductor element are bonded, includes the steps of arranging a semiconductor element on a base such that silver or silver oxide provided on a surface of the semiconductor element is in contact with silver or silver oxide provided on a surface of the base, and bonding the semiconductor element and the base by applying heat having a temperature of 200 to 900° C. to the semiconductor device and the base.
Public/Granted literature
- US20140141550A1 SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR Public/Granted day:2014-05-22
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