Invention Grant
- Patent Title: Multi-composition dielectric for semiconductor device
- Patent Title (中): 用于半导体器件的多组分电介质
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Application No.: US13772616Application Date: 2013-02-21
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Publication No.: US08927359B2Publication Date: 2015-01-06
- Inventor: Su-Hao Liu , Chun-Yi Chang , Ming-Feng Lin , Sheng-Wen Yu , Ziwei Fang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L21/02 ; H01L21/28
Abstract:
The present disclosure provides a method of semiconductor device fabrication including forming a multi-composition ILD layer by forming a first portion of an inter-layer dielectric (ILD) layer on a semiconductor substrate; and forming a second portion of an ILD layer on the first portion of the ILD layer. The second portion may have a greater silicon content than the first portion. For example, the second portion may be a silicon rich oxide.
Public/Granted literature
- US20140235044A1 MULTI-COMPOSITION DIELECTRIC FOR SEMICONDUCTOR DEVICE Public/Granted day:2014-08-21
Information query
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