Invention Grant
- Patent Title: Method for manufacturing silicon carbide semiconductor device
- Patent Title (中): 碳化硅半导体器件的制造方法
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Application No.: US13958151Application Date: 2013-08-02
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Publication No.: US08927368B2Publication Date: 2015-01-06
- Inventor: Yu Saitoh , Takeyoshi Masuda , Hideki Hayashi
- Applicant: Sumitomo Electric Industries, Ltd.
- Applicant Address: JP Osaka-shi
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka-shi
- Agency: Venable LLP
- Agent Michael A. Sartori; F. Brock Riggs
- Priority: JP2012-200180 20120912
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/3205 ; H01L21/4763 ; H01L29/66

Abstract:
A trench having a side wall and a bottom portion is formed in a silicon carbide substrate. A trench insulating film is formed to cover the bottom portion and the side wall. A silicon film is formed to fill the trench with the trench insulating film being interposed therebetween. The silicon film is etched so as to leave a portion of the silicon film that is disposed on the bottom portion with the trench insulating film being interposed therebetween. The trench insulating film is removed from the side wall. By oxidizing the silicon film, a bottom insulating film is formed. A side wall insulating film is formed on the side wall.
Public/Granted literature
- US20140073101A1 METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE Public/Granted day:2014-03-13
Information query
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