Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13765150Application Date: 2013-02-12
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Publication No.: US08927372B2Publication Date: 2015-01-06
- Inventor: Yongkuk Jeong , Seung Ho Chae , Jung Shik Heo
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2012-0049216 20120509
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/66
Abstract:
A semiconductor device may include a first insulating layer disposed on a substrate, a gate electrode disposed on the first insulating layer, and a second insulating layer disposed on the gate electrode and the first insulating layer. The second insulating layer includes a first discharge site.
Public/Granted literature
- US20130302964A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2013-11-14
Information query
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