Invention Grant
- Patent Title: Semiconductor device and fabrication method thereof
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US13252346Application Date: 2011-10-04
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Publication No.: US08927374B2Publication Date: 2015-01-06
- Inventor: Lilly Su , Pang-Yen Tsai , Tze-Liang Lee , Chii-Horng Li , Yen-Ru Lee , Ming-Hua Yu
- Applicant: Lilly Su , Pang-Yen Tsai , Tze-Liang Lee , Chii-Horng Li , Yen-Ru Lee , Ming-Hua Yu
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/04 ; H01L21/8234 ; H01L21/8238 ; H01L29/66 ; H01L29/78 ; H01L29/08

Abstract:
A method for fabricating a semiconductor device is disclosed. A strained material is formed in a cavity of a substrate and adjacent to an isolation structure in the substrate. The strained material has a corner above the surface of the substrate. The disclosed method provides an improved method for forming the strained material adjacent to the isolation structure with an increased portion in the cavity of the substrate to enhance carrier mobility and upgrade the device performance. The improved formation method is achieved by providing a treatment to redistribute at least a portion of the corner in the cavity.
Public/Granted literature
- US20130082309A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF Public/Granted day:2013-04-04
Information query
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