Invention Grant
- Patent Title: Method to bridge extrinsic and intrinsic base by selective epitaxy in BiCMOS technology
-
Application No.: US13627179Application Date: 2012-09-26
-
Publication No.: US08927379B2Publication Date: 2015-01-06
- Inventor: James W. Adkisson , Kevin K. Chan , David L. Harame , Qizhi Liu , John J. Pekarik
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Gibb & Riley, LLC
- Agent Michael J. Lestrange, Esq.
- Main IPC: H01L21/331
- IPC: H01L21/331 ; H01L29/732 ; H01L29/66 ; H01L29/737 ; H01L21/8228
Abstract:
A method of forming a heterojunction bipolar transistor. The method includes providing a structure comprising at least an intrinsic base region and an emitter pedestal region. A stack is formed on the intrinsic base region. The stack comprises a polysilicon layer and a top sacrificial oxide layer. A trench is formed in the structure. The trench circumscribes the intrinsic base region and the stack. An extrinsic base is formed at two regions around the stack. The extrinsic base is formed by a selective epitaxial growth process to create a bridge over the trench. The bridge connects the two regions. An opening is provided in the stack. The opening exposes a portion of the intrinsic base region. An emitter is formed in the opening.
Public/Granted literature
- US20140084420A1 METHOD TO BRIDGE EXTRINSIC AND INTRINSIC BASE BY SELECTIVE EPITAXY IN BICMOS TECHNOLOGY Public/Granted day:2014-03-27
Information query
IPC分类:
