Invention Grant
- Patent Title: SOI bipolar junction transistor with substrate bias voltages
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Application No.: US13369261Application Date: 2012-02-08
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Publication No.: US08927380B2Publication Date: 2015-01-06
- Inventor: Jin Cai , Tak H. Ning
- Applicant: Jin Cai , Tak H. Ning
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Ido Tuchman; Louis L. Percello
- Main IPC: H01L21/331
- IPC: H01L21/331 ; H01L21/8222
Abstract:
A circuit configuration and methods for controlling parameters of a bipolar junction transistor (BJT) fabricated on a substrate. A bias voltage is electrically coupled to the substrate and can be adjusted to alter the working parameters of a target BJT.
Public/Granted literature
- US20130200942A1 SOI BIPOLAR JUNCTION TRANSISTOR WITH SUBSTRATE BIAS VOLTAGES Public/Granted day:2013-08-08
Information query
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