Invention Grant
- Patent Title: Self-aligned bipolar junction transistors
- Patent Title (中): 自对准双极结型晶体管
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Application No.: US13847695Application Date: 2013-03-20
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Publication No.: US08927381B2Publication Date: 2015-01-06
- Inventor: David L. Harame , Qizhi Liu
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent William R. Allen; Anthony J. Canale
- Main IPC: H01L21/331
- IPC: H01L21/331 ; H01L21/8222 ; H01L29/73 ; H01L29/66
Abstract:
Device structures, fabrication methods, and design structures for a bipolar junction transistor. An intrinsic base is formed on the substrate, a terminal is formed on the intrinsic base, and an extrinsic base is formed that is arranged in juxtaposition with the intrinsic base on the substrate. The intrinsic base and terminal are respectively comprised of first and second semiconductor materials.
Public/Granted literature
- US20140284758A1 SELF-ALIGNED BIPOLAR JUNCTION TRANSISTORS Public/Granted day:2014-09-25
Information query
IPC分类:
