Invention Grant
- Patent Title: Group III nitrides on nanopatterned substrates
- Patent Title (中): 纳米图案衬底上的III族氮化物
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Application No.: US13734436Application Date: 2013-01-04
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Publication No.: US08927398B2Publication Date: 2015-01-06
- Inventor: Can Bayram , Devendra K. Sadana , Kuen-Ting Shiu
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Louis J. Percello, Esq.
- Main IPC: H01L21/36
- IPC: H01L21/36 ; H01L21/20 ; H01L29/20 ; H01L29/267
Abstract:
A patterned substrate is provided having at least two mesa surface portions, and a recessed surface located beneath and positioned between the at least two mesa surface portions. A Group III nitride material is grown atop the mesa surface portions of the patterned substrate and atop the recessed surface. Growth of the Group III nitride material is continued merging the Group III nitride material that is grown atop the mesa surface portions. When the Group III nitride material located atop the mesa surface portions merge, the Group III nitride material growth on the recessed surface ceases. The merged Group III nitride material forms a first Group III nitride material structure, and the Group III nitride material formed in the recessed surface forms a second material structure. The first and second material structures are disjoined from each other and are separated by an air gap.
Public/Granted literature
- US20140191283A1 GROUP III NITRIDES ON NANOPATTERNED SUBSTRATES Public/Granted day:2014-07-10
Information query
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