Invention Grant
- Patent Title: Insulating film and semiconductor device including the same
- Patent Title (中): 绝缘膜和包括其的半导体器件
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Application No.: US13445328Application Date: 2012-04-12
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Publication No.: US08927404B2Publication Date: 2015-01-06
- Inventor: Tatsuo Shimizu , Masato Koyama
- Applicant: Tatsuo Shimizu , Masato Koyama
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-020774 20080131
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L29/51 ; H01L21/318 ; H01L49/02 ; H01L21/28 ; H01L21/316 ; H01L21/3115 ; H01L29/66
Abstract:
It is made possible to provide an insulating film that can reduce the leakage current. An insulating film includes: an amorphous oxide dielectric film containing a metal, hydrogen, and nitrogen. The nitrogen amount [N] and the hydrogen amount [H] in the oxide dielectric film satisfy the following relationship: {[N]—[H]}/2≦1.0×1021 cm−3.
Public/Granted literature
- US20120196431A1 INSULATING FILM AND SEMICONDUCTOR DEVICE INCLUDING THE SAME Public/Granted day:2012-08-02
Information query
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