Invention Grant
- Patent Title: High-k transistors with low threshold voltage
- Patent Title (中): 具有低阈值电压的高k晶体管
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Application No.: US14046218Application Date: 2013-10-04
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Publication No.: US08927409B2Publication Date: 2015-01-06
- Inventor: Martin M. Frank
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L21/4763 ; H01L21/336 ; H01L21/8238 ; H01L21/28 ; H01L21/326 ; H01L29/51 ; H01L21/3105 ; H01L29/49
Abstract:
An apparatus includes a wafer annealing tool and a plurality of electrodes coupled to the wafer annealing tool, wherein the electrodes are configured to be in physical contact with a wafer so that, when the wafer is annealed, a negative electrical bias is formed across one or more gate stacks of the wafer.
Public/Granted literature
- US20140038403A1 HIGH-K TRANSISTORS WITH LOW THRESHOLD VOLTAGE Public/Granted day:2014-02-06
Information query
IPC分类:
