Invention Grant
US08927428B2 Process of forming an aluminum p-doped surface region of an n-doped semiconductor substrate
有权
形成n掺杂半导体衬底的铝p掺杂表面区域的工艺
- Patent Title: Process of forming an aluminum p-doped surface region of an n-doped semiconductor substrate
- Patent Title (中): 形成n掺杂半导体衬底的铝p掺杂表面区域的工艺
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Application No.: US13667054Application Date: 2012-11-02
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Publication No.: US08927428B2Publication Date: 2015-01-06
- Inventor: Kenneth Warren Hang , Alistair Graeme Prince , Michael Rose , Richard John Sheffield Young
- Applicant: E I du Pont de Nemours and Company
- Applicant Address: US DE Wilmington
- Assignee: E I du Pont de Nemours and Company
- Current Assignee: E I du Pont de Nemours and Company
- Current Assignee Address: US DE Wilmington
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/00 ; H01L31/0224 ; H01L31/0288 ; H01L31/068 ; H01L31/18
Abstract:
A process for the formation of at least one aluminum p-doped surface region of an n-type semiconductor substrate comprising the steps:(1) providing an n-type semiconductor substrate,(2) applying and drying an aluminum paste on at least one surface area of the n-type semiconductor substrate,(3) firing the dried aluminum paste, and(4) removing the fired aluminum paste with water,wherein the aluminum paste employed in step (2) includes particulate aluminum, an organic vehicle and 3 to 20 wt. % of glass frit, based on total aluminum paste composition.
Public/Granted literature
- US20130112251A1 PROCESS OF FORMING AN ALUMINUM P-DOPED SURFACE REGION OF AN N-DOPED SEMICONDUCTOR SUBSTRATE Public/Granted day:2013-05-09
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