Invention Grant
- Patent Title: Methods for manufacturing high dielectric constant films
- Patent Title (中): 制造高介电常数膜的方法
-
Application No.: US13437305Application Date: 2012-04-02
-
Publication No.: US08927438B2Publication Date: 2015-01-06
- Inventor: Hyungjun Kim , Woo-Hee Kim , Min-Kyu Kim , Steven Hung , Atif Noori , David Thompson , Jeffrey W. Anthis
- Applicant: Hyungjun Kim , Woo-Hee Kim , Min-Kyu Kim , Steven Hung , Atif Noori , David Thompson , Jeffrey W. Anthis
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/02 ; C23C16/40 ; H01L21/28 ; H01L29/51
Abstract:
Provided are methods for depositing a cerium doped hafnium containing high-k dielectric film on a substrate. The reagents of specific methods include hafnium tetrachloride, an organometallic complex of cerium and water.
Public/Granted literature
- US20120270409A1 Methods For Manufacturing High Dielectric Constant Films Public/Granted day:2012-10-25
Information query
IPC分类:
