Invention Grant
- Patent Title: Film deposition apparatus and method of depositing film
- Patent Title (中): 薄膜沉积装置和沉积薄膜的方法
-
Application No.: US13936523Application Date: 2013-07-08
-
Publication No.: US08927440B2Publication Date: 2015-01-06
- Inventor: Hitoshi Kato , Shigehiro Miura
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP2012-157728 20120713
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461 ; H01L21/02 ; C23C16/455 ; C23C16/458

Abstract:
A film deposition apparatus that laminates layers of reaction product by repeating cycles of sequentially supplying process gases that mutually reacts in a vacuum atmosphere includes a turntable receiving a substrate, process gas supplying portions supplying mutually different process gases to separated areas arranged in peripheral directions, and a separation gas supplying portion separating the process gases, wherein at least one process gas supplying portion extends between peripheral and central portions of the turntable and includes a gas nozzle discharging one process gas toward the turntable and a current plate provided on an upstream side to allow the separation gas to flow onto its upper surface, wherein a gap between the current plate and the turntable is gradually decreased from a central side of the turntable to a peripheral side of the turntable, and the gap is smaller on the peripheral side by 1 mm or greater.
Public/Granted literature
- US20140017905A1 FILM DEPOSITION APPARATUS AND METHOD OF DEPOSITING FILM Public/Granted day:2014-01-16
Information query
IPC分类: