Invention Grant
US08927852B2 Photovoltaic device with an up-converting quantum dot layer and absorber
有权
具有上转换量子点层和吸收体的光伏器件
- Patent Title: Photovoltaic device with an up-converting quantum dot layer and absorber
- Patent Title (中): 具有上转换量子点层和吸收体的光伏器件
-
Application No.: US12195596Application Date: 2008-08-21
-
Publication No.: US08927852B2Publication Date: 2015-01-06
- Inventor: Hans Jürgen Richter , Samuel Dacke Harkness, IV
- Applicant: Hans Jürgen Richter , Samuel Dacke Harkness, IV
- Applicant Address: US CA Cupertino
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Cupertino
- Agency: Hollingsworth Davis, LLC
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L31/042 ; H01L31/055 ; B82Y20/00 ; H01L31/0224
Abstract:
A photovoltaic apparatus includes an absorber including a first quantum dot layer having a first plurality of quantum dots of a first quantum dot material in a first matrix material, and an up-converter layer positioned adjacent to the absorber layer, the up-converter layer including a second quantum dot layer having a second plurality of quantum dots of a second quantum dot material and a second matrix material.
Public/Granted literature
- US20100043872A1 Photovoltaic Device With an Up-Converting Quantum Dot Layer and Absorber Public/Granted day:2010-02-25
Information query
IPC分类:
