Invention Grant
US08927857B2 Silicon: hydrogen photovoltaic devices, such as solar cells, having reduced light induced degradation and method of making such devices
有权
硅：诸如太阳能电池的氢光伏器件具有降低的光诱导劣化和制造这种器件的方法
- Patent Title: Silicon: hydrogen photovoltaic devices, such as solar cells, having reduced light induced degradation and method of making such devices
- Patent Title (中): 硅：诸如太阳能电池的氢光伏器件具有降低的光诱导劣化和制造这种器件的方法
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Application No.: US13036584Application Date: 2011-02-28
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Publication No.: US08927857B2Publication Date: 2015-01-06
- Inventor: Ahmed Abou-Kandil , Nasser Afify , Wanda Andreoni , Alessandro Curioni , Augustin J. Hong , Jeehwan Kim , Petr Khomyakov , Devendra K. Sadana
- Applicant: Ahmed Abou-Kandil , Nasser Afify , Wanda Andreoni , Alessandro Curioni , Augustin J. Hong , Jeehwan Kim , Petr Khomyakov , Devendra K. Sadana
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Harrington & Smith
- Agent Louis J. Percello
- Main IPC: H01L31/20
- IPC: H01L31/20 ; H01L31/0392 ; H01L21/02 ; H01L31/0376 ; H01L31/075 ; C23C16/24
Abstract:
A method of producing a photovoltaic device includes providing a stretchable substrate for the photovoltaic device; and stretching the substrate to produce a stretched substrate. The method further includes depositing a structure comprising hydrogenated amorphous silicon onto the stretched substrate; and subjecting the deposited hydrogenated amorphous silicon structure and the stretched substrate to a compressive force to form a compressively strained photovoltaic device.
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