Invention Grant
- Patent Title: Thermal infrared sensor and manufacturing method thereof
- Patent Title (中): 热红外传感器及其制造方法
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Application No.: US13227681Application Date: 2011-09-08
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Publication No.: US08927934B2Publication Date: 2015-01-06
- Inventor: Hidetaka Noguchi
- Applicant: Hidetaka Noguchi
- Applicant Address: JP Tokyo
- Assignee: Ricoh Company, Ltd.
- Current Assignee: Ricoh Company, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Cooper & Dunham LLP
- Priority: JP2010-204413 20100913
- Main IPC: G01J5/00
- IPC: G01J5/00 ; G01J5/08 ; G01J5/02
Abstract:
A thermal infrared sensor includes an infrared ray absorbing film that is thermally separated from a semiconductor substrate by a hollow part; and a temperature sensor configured to detect temperature changes of the infrared ray absorbing film. The infrared ray absorbing film includes an infrared ray antireflection structure configured with a sub wavelength structure, the infrared ray antireflection structure being provided on a surface of the infrared ray absorbing film facing the semiconductor substrate.
Public/Granted literature
- US20120061569A1 THERMAL INFRARED SENSOR AND MANUFACTURING METHOD THEREOF Public/Granted day:2012-03-15
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