Invention Grant
- Patent Title: Electrochemically-gated field-effect transistor, methods for its manufacture and use thereof
- Patent Title (中): 电化学门控场效应晶体管，其制造方法及其应用
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Application No.: US13869617Application Date: 2013-04-24
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Publication No.: US08927967B2Publication Date: 2015-01-06
- Inventor: Subho Dasgupta , Horst Hahn , Babak Nasr
- Applicant: Karlsruher Institut fuer Technologie
- Applicant Address: DE Karlsruhe
- Assignee: Karlsruhe Institute of Technology
- Current Assignee: Karlsruhe Institute of Technology
- Current Assignee Address: DE Karlsruhe
- Agency: Venable LLP
- Agent Robert Kinberg; George L. Howarah
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/08 ; G01N27/414 ; H01L51/05
Abstract:
An electrochemically-gated field-effect transistor includes a source electrode, a drain electrode, a gate electrode, a transistor channel and an electrolyte. The transistor channel is located between the source electrode and the drain electrode. The electrolyte completely covers the transistor channel and has a one-dimensional nanostructure and a solid polymer-based electrolyte that is employed as the electrolyte.
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