Invention Grant
- Patent Title: Current-amplifying transistor device and current-amplifying, light-emitting transistor device
- Patent Title (中): 电流放大晶体管器件和电流放大，发光晶体管器件
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Application No.: US13392409Application Date: 2010-09-03
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Publication No.: US08927972B2Publication Date: 2015-01-06
- Inventor: Ken-ichi Nakayama , Junji Kido , Yong-Jin Pu , Fumito Suzuki , Naomi Oguma , Naoki Hirata
- Applicant: Ken-ichi Nakayama , Junji Kido , Yong-Jin Pu , Fumito Suzuki , Naomi Oguma , Naoki Hirata
- Applicant Address: JP Chuo-ku, Tokyo JP Yonezawa-shi, Yamagata
- Assignee: Dainichiseika Color & Chemicals Mfg. Co., Ltd.,Ken-ichi Nakayama
- Current Assignee: Dainichiseika Color & Chemicals Mfg. Co., Ltd.,Ken-ichi Nakayama
- Current Assignee Address: JP Chuo-ku, Tokyo JP Yonezawa-shi, Yamagata
- Agency: Taft Stettinius & Hollister LLP
- Priority: JP2009-205022 20090904
- International Application: PCT/JP2010/065576 WO 20100903
- International Announcement: WO2011/027915 WO 20110310
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L51/00 ; H01L51/52 ; B82Y10/00 ; H01L51/05
Abstract:
A current-amplifying transistor device is provided, between an emitter electrode and a collector electrode, with two organic semiconductor layers and a sheet-shaped base electrode. One of the organic semiconductor layers is arranged between the emitter electrode and the base collector electrode, and has a diode structure of a p-type organic semiconductor layer and an n-type p-type organic semiconductor layer. A current-amplifying, light-emitting transistor device including the current-amplifying transistor device and an organic EL device portion formed in the current-amplifying transistor device is also disclosed.
Public/Granted literature
- US20120146011A1 Current-Amplifying Transistor Device and Current-Amplifying, Light-Emitting Transistor Device Public/Granted day:2012-06-14
Information query
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