Invention Grant
US08927982B2 Oxide semiconductor film, semiconductor device, and manufacturing method of semiconductor device
有权
氧化物半导体膜，半导体器件以及半导体器件的制造方法
- Patent Title: Oxide semiconductor film, semiconductor device, and manufacturing method of semiconductor device
- Patent Title (中): 氧化物半导体膜，半导体器件以及半导体器件的制造方法
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Application No.: US13415080Application Date: 2012-03-08
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Publication No.: US08927982B2Publication Date: 2015-01-06
- Inventor: Junichi Koezuka , Yuichi Sato , Shinji Ohno
- Applicant: Junichi Koezuka , Yuichi Sato , Shinji Ohno
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2011-060152 20110318
- Main IPC: H01L29/12
- IPC: H01L29/12 ; H01L29/786
Abstract:
A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. In a transistor using an oxide semiconductor film for an active layer, a microvoid is provided in a source region and a drain region adjacent to a channel region. By providing a microvoid in the source region and the drain region formed in an oxide semiconductor film, hydrogen contained in the channel region of an oxide semiconductor film can be captured in the microvoid.
Public/Granted literature
- US20120235137A1 OXIDE SEMICONDUCTOR FILM, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2012-09-20
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