Invention Grant
- Patent Title: Semiconductor device and method of manufacturing semiconductor device
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13902180Application Date: 2013-05-24
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Publication No.: US08928002B2Publication Date: 2015-01-06
- Inventor: Satoshi Hatsukawa
- Applicant: Sumitomo Electric Industries, Ltd.
- Applicant Address: JP Osaka-shi
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka-shi
- Agency: Venable LLP
- Agent Michael A. Sartori
- Priority: JP2012-145086 20120628
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L31/0256 ; H01L27/02 ; H01L25/07 ; H01L25/18 ; H01L21/66 ; H01L23/48

Abstract:
To provide a semiconductor device which allows a plurality of semiconductor chips to let a current flow uniformly therethrough and a method of manufacturing the same. The semiconductor device in accordance with one embodiment comprises a plurality of first semiconductor chips and a circuit board, mounted with the plurality of the first semiconductor chips, having first and second wiring conductors electrically connected to the plurality of first semiconductor chips. The plurality of first semiconductor chips are connected in parallel together with the first and second wiring conductors so as to construct a first parallel circuit. The plurality of first semiconductor chips are arranged on the circuit board according to an on-resistance of the plurality of first semiconductor chips so that a uniform current flows through the plurality of first semiconductor chips.
Public/Granted literature
- US20140001482A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2014-01-02
Information query
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