Invention Grant
- Patent Title: Optoelectronic device and method for manufacturing the same
- Patent Title (中): 光电子器件及其制造方法
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Application No.: US13565993Application Date: 2012-08-03
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Publication No.: US08928026B2Publication Date: 2015-01-06
- Inventor: Chao-Hsing Chen , Chien-Fu Shen , Schang-Jing Hon , Tsun-Kai Ko , Wei-Yo Chen
- Applicant: Chao-Hsing Chen , Chien-Fu Shen , Schang-Jing Hon , Tsun-Kai Ko , Wei-Yo Chen
- Applicant Address: TW Hsinchu
- Assignee: Epistar Corporation
- Current Assignee: Epistar Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Bacon & Thomas, PLLC
- Priority: TW100127879A 20110804; TW101109301A 20120316
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/38 ; H01L33/40 ; H01L33/20

Abstract:
An optoelectronic device comprises a semiconductor stack comprising a first semiconductor layer, an active layer and a second semiconductor layer, a first electrode electrically connecting with the first semiconductor layer, a second electrode electrically connecting with the second semiconductor layer, wherein there is a smallest distance D1 between the first electrode and the second electrode, a third electrode formed on a portion of the first electrode and electrically connecting with the first electrode and a fourth electrode formed on a portion of the first electrode and on a portion of the second electrode, and electrically connecting with the second electrode, wherein there is a smallest distance D2 between the third electrode and the fourth electrode, and the smallest distance D2 is smaller than the smallest distance D1.
Public/Granted literature
- US20130032848A1 OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2013-02-07
Information query
IPC分类: