Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13287260Application Date: 2011-11-02
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Publication No.: US08928033B2Publication Date: 2015-01-06
- Inventor: Sang-Jong Kim , Jae-Hyeon Park , Sung-Hoon Bae , Jong-Wan Ma
- Applicant: Sang-Jong Kim , Jae-Hyeon Park , Sung-Hoon Bae , Jong-Wan Ma
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2010-0113352 20101115
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L27/02 ; H01L21/8234 ; H01L23/00

Abstract:
A semiconductor device, including a substrate having an active region defined therein, a plurality of bit lines extending on the substrate in a first direction, a plurality of interconnection lines extending on the substrate in a second direction, a pad electrically connected to the plurality of interconnection lines and configured to apply an external voltage, a plurality of metal contacts electrically connecting the interconnection lines and the plurality of bit lines, and a plurality of bit line contacts that are in contact with the active region and electrically connect the plurality of bit lines and the active region, wherein a size of at least some of the bit line contacts and/or at least some of the metal contacts vary based on a distance of the respective bit line contact or the metal contact from the pad.
Public/Granted literature
- US20120119300A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-05-17
Information query
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