Invention Grant
- Patent Title: Nonvolatile semiconductor memory device and manufacturing method thereof
- Patent Title (中): 非易失性半导体存储器件及其制造方法
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Application No.: US12408796Application Date: 2009-03-23
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Publication No.: US08928062B2Publication Date: 2015-01-06
- Inventor: Naoki Yasuda
- Applicant: Naoki Yasuda
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-291217 20081113
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L29/423 ; H01L27/12 ; H01L29/51 ; H01L21/84 ; H01L29/06 ; H01L21/28 ; H01L21/762
Abstract:
A nonvolatile semiconductor memory device includes a plurality of nonvolatile memory cells formed on a semiconductor substrate, each memory cell including source and drain regions separately formed on a surface portion of the substrate, buried insulating films formed in portions of the substrate that lie under the source and drain regions and each having a dielectric constant smaller than that of the substrate, a tunnel insulating film formed on a channel region formed between the source and drain regions, a charge storage layer formed of a dielectric body on the tunnel insulating film, a block insulating film formed on the charge storage layer, and a control gate electrode formed on the block insulating film.
Public/Granted literature
- US20100117136A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2010-05-13
Information query
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