Invention Grant
- Patent Title: Bulk fin-field effect transistors with well defined isolation
- Patent Title (中): 散装场效应晶体管具有明确的隔离
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Application No.: US14054152Application Date: 2013-10-15
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Publication No.: US08928067B2Publication Date: 2015-01-06
- Inventor: Kangguo Cheng , Balasubramanian S. Haran , Shom Ponoth , Theodorus E. Standaert , Tenko Yamashita
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Fleit Gibbons Gutman Bongini & Bianco PL
- Agent Thomas Grzesik
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119 ; H01L29/66
Abstract:
A computer program storage product includes instructions for forming a fin field-effect-transistor. The instructions are configured to perform a method. The method includes implanting a dopant into an exposed portion of a semiconductor substrate within a cavity. The cavity is formed in a dielectric layer on the semiconductor substrate. The cavity exposes the portion of the semiconductor substrate within the cavity. A semiconductor layer is epitaxially grown within the cavity atop the dopant implanted exposed portion of the semiconductor substrate. A height of the cavity defines a height of the epitaxially grown semiconductor.
Public/Granted literature
- US20140295647A1 BULK FIN-FIELD EFFECT TRANSISTORS WITH WELL DEFINED ISOLATION Public/Granted day:2014-10-02
Information query
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