Invention Grant
- Patent Title: Semiconductor devices including guard ring structures
- Patent Title (中): 半导体器件包括保护环结构
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Application No.: US13787147Application Date: 2013-03-06
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Publication No.: US08928073B2Publication Date: 2015-01-06
- Inventor: Se-myeong Jang , Sang-hyun Han , Hyo-dong Ban
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2012-0028415 20120320
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L27/088 ; H01L21/8234

Abstract:
A semiconductor device includes a substrate partitioned into a cell region, a peripheral circuit region, and an interface region between the cell region and the peripheral circuit region. A guard ring is provided in the interface region of the substrate and surrounds the cell region. A first gate structure is in the cell region, and a second gate structure is in the peripheral circuit region.
Public/Granted literature
- US20130248997A1 Semiconductor Devices Including Guard Ring Structures Public/Granted day:2013-09-26
Information query
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