Invention Grant
- Patent Title: FinFET body contact and method of making same
- Patent Title (中): FinFET体接触及其制作方法
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Application No.: US14203407Application Date: 2014-03-10
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Publication No.: US08928093B2Publication Date: 2015-01-06
- Inventor: Ching-Hsiung Lo , Jam-Wem Lee , Wun-Jie Lin , Jen-Chou Tseng
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/66 ; H01L29/423 ; H01L29/78 ; H01L27/02
Abstract:
A semiconductor device may include body contacts on a finFET device for ESD protection. The semiconductor device comprises a semiconductor fin, a source/drain region and a body contact. The source/drain region and the body contact are in the semiconductor fin. A portion of the fin is laterally between the source/drain region and the body contact. The semiconductor fin is on a substrate.
Public/Granted literature
- US20140193959A1 FinFET Body Contact and Method of Making Same Public/Granted day:2014-07-10
Information query
IPC分类:
