Invention Grant
- Patent Title: Semiconductor device having reduced leakage current at breakdown and method of fabricating thereof
- Patent Title (中): 具有减小的击穿漏电流的半导体器件及其制造方法
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Application No.: US13969011Application Date: 2013-08-16
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Publication No.: US08928095B2Publication Date: 2015-01-06
- Inventor: Chien-Chung Chen , Ming-Tung Lee , Yin-Fu Huang , Shih-Chin Lien , Shyi-Yuan Wu
- Applicant: Macronix International Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Alston & Bird LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/265 ; H01L29/08 ; H01L29/66 ; H01L29/786
Abstract:
A semiconductor device having a well, a p well implant bounded at least in part within a substrate by the well, a conductive layer disposed on the substrate, a high voltage n− (HVN−) doped well implanted in the p well implant, a high voltage p doped (HVPD) well implanted in the p well implant, and a drain n− well and a source n− well disposed in the HVN− doped well and HVPD well, respectively, is provided. A method of fabricating the semiconductor device is also provided. In certain embodiments, the method of fabricating the semiconductor device is characterized by implanting the HVN− ions at a first tilt angle and/or implanting the HVPD ions at a second tilt angle.
Public/Granted literature
- US20140264599A1 SEMICONDUCTOR DEVICE HAVING REDUCED LEAKAGE CURRENT AT BREAKDOWN AND METHOD OF FABRICATING THEREOF Public/Granted day:2014-09-18
Information query
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