Invention Grant
- Patent Title: Noise decoupling structure with through-substrate vias
- Patent Title (中): 带通孔的噪声去耦结构
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Application No.: US12889650Application Date: 2010-09-24
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Publication No.: US08928127B2Publication Date: 2015-01-06
- Inventor: Chia-Chung Chen , Chewn-Pu Jou , Sally Liu
- Applicant: Chia-Chung Chen , Chewn-Pu Jou , Sally Liu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/552
- IPC: H01L23/552 ; H01L23/58

Abstract:
A device includes a substrate having a front surface and a back surface; an integrated circuit device at the front surface of the substrate; and a metal plate on the back surface of the substrate, wherein the metal plate overlaps substantially an entirety of the integrated circuit device. A guard ring extends into the substrate and encircles the integrated circuit device. The guard ring is formed of a conductive material. A through substrate via (TSV) penetrates through the substrate and electrically couples to the metal plate.
Public/Granted literature
- US20120074515A1 Noise Decoupling Structure with Through-Substrate Vias Public/Granted day:2012-03-29
Information query
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