Invention Grant
US08928128B2 Semiconductor package with integrated electromagnetic shielding 有权
集成电磁屏蔽半导体封装

Semiconductor package with integrated electromagnetic shielding
Abstract:
There are disclosed herein various implementations of a shield interposer situated between a top active die and a bottom active die for shielding the active dies from electromagnetic noise. One implementation includes an interposer dielectric layer, a through-silicon via (TSV) within the interposer dielectric layer, and an electromagnetic shield. The TSV connects the electromagnetic shield to a first fixed potential. The electromagnetic shield may include a grid of conductive layers laterally extending across the shield interposer. The shield interposer may also include another electromagnetic shield connected to another fixed potential.
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