Invention Grant
US08928129B2 Semiconductor packaging for a memory device and a fabricating method thereof
有权
一种用于存储器件的半导体封装及其制造方法
- Patent Title: Semiconductor packaging for a memory device and a fabricating method thereof
- Patent Title (中): 一种用于存储器件的半导体封装及其制造方法
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Application No.: US13550186Application Date: 2012-07-16
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Publication No.: US08928129B2Publication Date: 2015-01-06
- Inventor: In-Sang Song
- Applicant: In-Sang Song
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2011-0081305 20110816
- Main IPC: H01L23/552
- IPC: H01L23/552 ; H01L23/04 ; H01L27/08 ; H01L29/40 ; H01L21/76 ; H01L23/00 ; H01L23/498 ; H01L25/065
Abstract:
A semiconductor device includes a substrate, a semiconductor chip, a first molding member and a metal layer. The substrate includes a first ground pad formed therein, the first ground pad having a first exposed surface exposed at a first surface of the substrate. The semiconductor chip is formed on the first surface of the substrate. The first molding member is formed on the first surface of the substrate and covers the semiconductor chip while not covering the first exposed surface. The metal layer covers the first molding member and extends to lateral surfaces of the substrate while contacting the first exposed surface.
Public/Granted literature
- US20130043568A1 MEMORY DEVICE AND A FABRICATING METHOD THEREOF Public/Granted day:2013-02-21
Information query
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