Invention Grant
US08928132B2 Semiconductor package having through silicon via (TSV) interposer and method of manufacturing the semiconductor package 有权
具有通过硅通孔(TSV)插入器的半导体封装以及半导体封装的制造方法

Semiconductor package having through silicon via (TSV) interposer and method of manufacturing the semiconductor package
Abstract:
A semiconductor package having a reduced size by including an interposer having through substrate vias (TSVs), the semiconductor package may comprise a lower semiconductor package which includes a lower base substrate, an interposer with TSVs on the lower base substrate, and a lower semiconductor chip on the interposer and electrically connected to the interposer. The semiconductor package may include an upper semiconductor package on the lower semiconductor package including an upper semiconductor chip and package connecting members on the interposer and electrically connect the upper semiconductor package to the interposer. An exterior molding member may be provided.
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